Geometrical Analysis of Field - Ion Images
نویسنده
چکیده
Field ion microscopy (FIM), transmission electron microscopy (TEM) and computer simulation techniques have been used to experimentally investigate the field ion image geometry. Electron micrographs and electron diffraction patterns were obtained from tungsten specimens after controlled amounts of field evaporation. From a knowledge of the changes in the image dimensions as a function of the variation in the tip radius and the tip profile from the electron micrographs, an attempt has been made to define the projection point and the ion trajectory. The information has been used to obtain computer simulated patterns and the results are discussed.
منابع مشابه
Voltage increase of aqueous lithium-ion batteries by Li-ion conducting Li1.5Al0.5Ge1.5(PO4)3 glass-ceramic
In this research, a lithium ion conducting lithium aluminum germanium phosphate (LAGP) glass-ceramic with a formula of Li1.5Al0.5Ge1.5(PO4)3 was synthesized by melt-quenching method and subsequent crystallization at 850 °C for 8 h. The prepared glass-ceramic was characterized using X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM). The XRD patterns exhib...
متن کاملAnalysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...
متن کاملAnalysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...
متن کاملPlanelet Transform: A New Geometrical Wavelet for Compression of Kinect-like Depth Images
With the advent of cheap indoor RGB-D sensors, proper representation of piecewise planar depth images is crucial toward an effective compression method. Although there exist geometrical wavelets for optimal representation of piecewise constant and piecewise linear images (i.e. wedgelets and platelets), an adaptation to piecewise linear fractional functions which correspond to depth variation ov...
متن کاملStress Analysis of the Human Ligamentous Lumber Spine-From Computer-Assisted Tomography to Finite Element Analysis
Detailed investigation on biomechanics of a complex structure such as the human lumbar spine requires the use of advanced computer-based technique for both the geometrical reconstruction and the stress analysis. In the present study, the computer-assisted tomography (CAT) and finite element method (FEM) are merged to perform detailed three dimensional nonlinear analysis of the human ligamentous...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017